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A Simplified Behavioral MOSFET Model Based on Parameters Extraction for Circuit Simulations
Gdansk Univ Technol, Fac Elect & Control Engn, PL-80233 Gdansk, Poland..
Blekinge Tekniska Högskola, Fakulteten för teknikvetenskaper, Institutionen för tillämpad signalbehandling.
2016 (engelsk)Inngår i: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 31, nr 4, s. 3096-3105Artikkel i tidsskrift (Fagfellevurdert) Published
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Abstract [en]

This paper presents results on behavior modeling of a general purpose metal-oxide-semiconductor field-effect transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady state and in switching conditions. Methods of parameters extraction, including nonlinearity of parasitic capacitances and steady-state characteristics, are based on manufacturer datasheet and externally measurable characteristics. The MOSFET template is written in the MAST language and simulated in the SABER simulator. Experimental validation of the N-channel power MOSFET-type IRFP240 (Fairchild Semiconductor) rated at 20 A/200 V is performed in a dc/dc boost converter. The main features of the developed model have been compared with the properties of an analytical MOSFET model and a general MOSFET model embedded to a SABER simulator.

sted, utgiver, år, opplag, sider
2016. Vol. 31, nr 4, s. 3096-3105
Emneord [en]
Behavioral model, capacitance-voltage characteristics, circuit simulation, MOSFETs, parameter extraction, semiconductor device modeling
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URN: urn:nbn:se:bth-11343DOI: 10.1109/TPEL.2015.2445375ISI: 000365953100036OAI: oai:DiVA.org:bth-11343DiVA, id: diva2:890749
Tilgjengelig fra: 2016-01-04 Laget: 2016-01-04 Sist oppdatert: 2017-12-01bibliografisk kontrollert

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