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Group analysis of the drift–diffusion model for quantum semiconductors
Blekinge Institute of Technology, Faculty of Engineering, Department of Mathematics and Natural Sciences.ORCID iD: 0000-0002-0076-1067
Blekinge Institute of Technology, Faculty of Engineering, Department of Mathematics and Natural Sciences.
2015 (English)In: Communications in nonlinear science & numerical simulation, ISSN 1007-5704, E-ISSN 1878-7274, Vol. 20, no 1, p. 74-78Article in journal (Refereed) Published
Abstract [en]

In the present paper a quantum drift–diffusion model describing semi-conductor devices is considered. New conservation laws for the model are computed and used to construct exact solutions.
Place, publisher, year, edition, pages
Elsevier , 2015. Vol. 20, no 1, p. 74-78
Keywords [en]
Quantum semiconductor, quantum drift–diffusion model, group analysis, nonlinear self-adjointness, conservation laws, exact solutions
National Category
Mathematics Mathematical Analysis
Identifiers
URN: urn:nbn:se:bth-6325DOI: 10.1016/j.cnsns.2014.05.020ISI: 000341356700008Local ID: oai:bth.se:forskinfo0BA5C8D508543030C1257DA90045D563OAI: oai:DiVA.org:bth-6325DiVA, id: diva2:833822
Note

http://www.sciencedirect.com/science/article/pii/S1007570414002263

Available from: 2015-05-26 Created: 2014-12-09 Last updated: 2023-03-07Bibliographically approved

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Ibragimov, NailKhamitova, Raisa

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