A Simplified Behavioral MOSFET Model Based on Parameters Extraction for Circuit Simulations
2016 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 31, no 4, 3096-3105 p.Article in journal (Refereed) PublishedText
This paper presents results on behavior modeling of a general purpose metal-oxide-semiconductor field-effect transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady state and in switching conditions. Methods of parameters extraction, including nonlinearity of parasitic capacitances and steady-state characteristics, are based on manufacturer datasheet and externally measurable characteristics. The MOSFET template is written in the MAST language and simulated in the SABER simulator. Experimental validation of the N-channel power MOSFET-type IRFP240 (Fairchild Semiconductor) rated at 20 A/200 V is performed in a dc/dc boost converter. The main features of the developed model have been compared with the properties of an analytical MOSFET model and a general MOSFET model embedded to a SABER simulator.
Place, publisher, year, edition, pages
2016. Vol. 31, no 4, 3096-3105 p.
Behavioral model, capacitance-voltage characteristics, circuit simulation, MOSFETs, parameter extraction, semiconductor device modeling
IdentifiersURN: urn:nbn:se:bth-11343DOI: 10.1109/TPEL.2015.2445375ISI: 000365953100036OAI: oai:DiVA.org:bth-11343DiVA: diva2:890749