Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
A Simplified Behavioral MOSFET Model Based on Parameters Extraction for Circuit Simulations
Gdansk Univ Technol, Fac Elect & Control Engn, PL-80233 Gdansk, Poland..
Blekinge Institute of Technology, Faculty of Engineering, Department of Applied Signal Processing.
2016 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 31, no 4, p. 3096-3105Article in journal (Refereed) Published
Resource type
Text
Abstract [en]

This paper presents results on behavior modeling of a general purpose metal-oxide-semiconductor field-effect transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady state and in switching conditions. Methods of parameters extraction, including nonlinearity of parasitic capacitances and steady-state characteristics, are based on manufacturer datasheet and externally measurable characteristics. The MOSFET template is written in the MAST language and simulated in the SABER simulator. Experimental validation of the N-channel power MOSFET-type IRFP240 (Fairchild Semiconductor) rated at 20 A/200 V is performed in a dc/dc boost converter. The main features of the developed model have been compared with the properties of an analytical MOSFET model and a general MOSFET model embedded to a SABER simulator.

Place, publisher, year, edition, pages
2016. Vol. 31, no 4, p. 3096-3105
Keywords [en]
Behavioral model, capacitance-voltage characteristics, circuit simulation, MOSFETs, parameter extraction, semiconductor device modeling
National Category
Signal Processing
Identifiers
URN: urn:nbn:se:bth-11343DOI: 10.1109/TPEL.2015.2445375ISI: 000365953100036OAI: oai:DiVA.org:bth-11343DiVA, id: diva2:890749
Available from: 2016-01-04 Created: 2016-01-04 Last updated: 2017-12-01Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Authority records BETA

Kulesza, Wlodek J.

Search in DiVA

By author/editor
Kulesza, Wlodek J.
By organisation
Department of Applied Signal Processing
In the same journal
IEEE transactions on power electronics
Signal Processing

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 93 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf