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  • 1.
    Turzynski, Marek
    et al.
    Gdansk Univ Technol, Fac Elect & Control Engn, PL-80233 Gdansk, Poland..
    Kulesza, Wlodek J.
    Blekinge Institute of Technology, Faculty of Engineering, Department of Applied Signal Processing.
    A Simplified Behavioral MOSFET Model Based on Parameters Extraction for Circuit Simulations2016In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 31, no 4, p. 3096-3105Article in journal (Refereed)
    Abstract [en]

    This paper presents results on behavior modeling of a general purpose metal-oxide-semiconductor field-effect transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady state and in switching conditions. Methods of parameters extraction, including nonlinearity of parasitic capacitances and steady-state characteristics, are based on manufacturer datasheet and externally measurable characteristics. The MOSFET template is written in the MAST language and simulated in the SABER simulator. Experimental validation of the N-channel power MOSFET-type IRFP240 (Fairchild Semiconductor) rated at 20 A/200 V is performed in a dc/dc boost converter. The main features of the developed model have been compared with the properties of an analytical MOSFET model and a general MOSFET model embedded to a SABER simulator.

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